![]() ![]() If the gate voltage is not applied properly, the MOSFET will remain turn OFF condition. Note: More technical specifications can be found on the IRF630 datasheet attached at the bottom of this page.Ī MOSFET can be turned ON by supplying proper gate voltage between the gate and source terminal. Operating junction and storage temperature range: -55 to 150 ˚C.On-state resistance between drain and source: 0.40 Ω.Maximum Drain current (continuous) ID: 9 A.Maximum applied voltage from drain-to-source (VDS): 200 V. ![]() The application of IRF630 is as listed below This Power MOSFET is specially designed to minimize input capacitance and gate change, and available in package TO-220. It can drive current up to 36 A in pulse mode for 300 μs with a duty cycle of 2%. IRF630 is designed to sustain load voltage up to 200 V and 9 A current. This component is a great combination of low on-state resistance, cost-effective, and rugged design. IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |